ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,497,470, issued on Dec. 16, was assigned to Borealis AG (Vienna). "C 2 C 3 random copolymer" was invented by Jingbo Wang (Linz, Austria), Marku... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,679, issued on Dec. 16, was assigned to SMARTSKY NETWORKS LLC (Morrisville, N.C.). "Dynamic test bench for aircraft system testing" was inv... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,627, issued on Dec. 16, was assigned to STMicroelectronics Austria GmbH (Graz, Austria). "NFC loop antenna in the vicinity of a metallic st... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,576, issued on Dec. 16, was assigned to GOERTEK INC. (Weifang, China). "Head-mounted device and heat dissipation method therefor, and compu... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,497,676, issued on Dec. 16, was assigned to JFE STEEL Corp. (Tokyo). "Stainless steel seamless pipe and method for manufacturing same" was inve... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,788, issued on Dec. 16, was assigned to SAMSUNG DISPLAY Co. LTD. (Gyeonggi-Do, South Korea). "Display panel including active pattern overla... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,357, issued on Dec. 16, was assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Hsinchu, Taiwan). "Data compression method, data compress... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,547, issued on Dec. 16, was assigned to Unirac Inc. (Albuquerque, N.M.). "Cabling systems for rooftop photovoltaic solar systems" was inven... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,803, issued on Dec. 16, was assigned to Samsung Display Co. LTD. (Gyeonggi-do, South Korea). "Display device and method of manufacturing th... Read More
ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,666, issued on Dec. 16, was assigned to HITACHI ENERGY LTD (Zurich). "Power semiconductor device with an insulated trench gate electrode" w... Read More