India, May 13 -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, has announced the latest advancement in its groundbreaking 3D X-DRAM technology family - the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications.

Built on a 3D NAND-like architecture and with proof-of-concept test chips expected in 2026, the new 1T1C and 3T0C designs combine the performance of DRAM with the manufacturability of NAND, enabling cost-effective, high-yield production with densities up to 512Gb - a 10x improvement over conventional DRAM.

"With the introduction of t...