India, Dec. 15 -- Navitas Semiconductor, an industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, announced the sample availability of its new 3300V and 2300V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats.

These new SiC products set a benchmark for reliability and enhanced performance in ultra-high voltage power electronics.

Proprietary trench-assisted planar (TAP) SiC MOSFET augments performance and reliability

These 3300V and 2300V UHV devices are based on Navitas' fourth-generation GeneSiC platform, which uses a TAP architecture to implement a multi-step e-field management profile that significantly reduces voltage stres...