India, Nov. 21 -- The QST substrate, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co. Ltd developed, has been adopted for the 300-mm GaN power device development program at imec, Belgium. Sample evaluation is currently in progress.

In the evaluation, the 5 µm-thick HEMT device using a QST substrate achieved a record-breaking voltage resistance exceeding 650 V for a 300mm substrate.

Shin-Etsu Chemical, licensed by QROMIS Inc. manufactures 150-mm and 200-mm QST substrates, as well as GaN-on-QST epitaxial substrates of various diameters. In September 2024, we started providing 300-mm QST samples in a joint initiative with QROMIS.

Shin-Etsu Chemical and QROMIS have established a close partnership to provide 300-mm QST substra...