India, Dec. 30 -- CEA-Leti and STMicroelectronics presented results at IEDM 2025 showcasing key enablers for a new high-performance and versatile RF Si platform cointegrating best-in-class active and passive devices used in RF and Optical FEM.

Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer-opening a path to highly integrated, low parasitic, and targeting cost-efficient systems for next-generation wireless and wireline communications.

The paper, "Unlocking High-Performance Si RF Platforms with SiGe HBT and RFSOI Switch Technologies," describes how those high-performance components can be built directly on the ...