India, March 31 -- RIR Power Electronics, a global semiconductor company, is on track to establish India's First Silicon Carbide (SiC) Semiconductor production facility in Odisha, with the production of epitaxy wafer as part of phase 1 production expected to commence by December 2025.

This strategic investment of Rs.618 Crores to produce high-power SiC devices marks a landmark achievement in advancing India's semiconductor industry, and strengthening domestic manufacturing capabilities under the Make in India Initiative to produce high power mosfets and diodes from 3.3KV to 20KV.

"We are proud to align with Odisha's vision of fostering semiconductor manufacturing and innovation. With the support of the Odisha government, we are on track...