ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,447, issued on Dec. 23, was assigned to MURATA MANUFACTURING Co. LTD. (Nagaokakyo, Japan). "Tunable hybrid wideband LNA architecture" was i... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,113, issued on Dec. 23, was assigned to SEMES Co. LTD. (Chungcheongnam-do, South Korea). "Method of bonding a semiconductor die to a wafer"... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,501,954, issued on Dec. 23, was assigned to Columbia Sportswear North America Inc. (Portland, Ore.). "Multilayered multifunctional heat-managem... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,154, issued on Dec. 23, was assigned to Mitsubishi Electric Corp. (Tokyo). "Redundant resolver and electric power steering device mounted t... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,502,460, issued on Dec. 23, was assigned to Nanyang Technological University (Singapore). "Therapeutic hydrogel device" was invented by Thuy Tr... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,579, issued on Dec. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Wavelength tuning in silicon ph... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. D1,106,825, issued on Dec. 23, was assigned to The Procter & Gamble Co. (Cincinnati). "Bottle for a cosmetic composition" was invented by Jonathan... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,714, issued on Dec. 23, was assigned to Hubbell Inc. (Shelton, Conn.). "Systems and methods for secure communication over a network using a... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,800, issued on Dec. 23, was assigned to Hexagon Technology Center GmbH (Heerbrugg, Switzerland). "Precision geometry service for thin clien... Read More
ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,512, issued on Dec. 23, was assigned to SEOUL SEMICONDUCTOR Co. LTD. (Ansan-si, South Korea). "Wafer-level light emitting diode package and... Read More