Japan, June 9 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed innovative technology that significantly reduces losses (on-resistance) in silicon carbide (SiC) trench MOSFETs while enhancing UIS ruggedness. Additionally, Toshiba has developed SiC semi-super junction Schottky barrier diodes (SJ-SBDs) that suppress the increase in on-resistance at high temperatures. These advances are expected to greatly improve the reliability and efficiency of devices used in power conversion applications, such as electric vehicles and renewable energy systems.Power semiconductors, which supply and control power, are essential for energy-saving in all electrical equipment, and achieving carbon neutrality. With the electrificatio...