Japan, Aug. 22 -- Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC Co., Ltd. ("SICC") have signed a memorandum of understanding (MOU) under which they will explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two companies will discuss the scope of their joint efforts and mutual support.Power semiconductors convert and control power supply, and are seen an essential tool for cutting power consumption in all kinds of electrical and electronic equipment, and for achieving carbon neutrality. Along with increasing efficiency requirements, demand fo...