Japan, Dec. 2 -- Mitsubishi Electric Corporation announced that it will launch new standard-isolation (6.0kVrms) and high-isolation (10.2kVrms) modules in its 4.5kV/1,200A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs) on December 9. These new high-capacity power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. Mitsubishi Electric will exhibit the new modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, as well as other exhibitions in North America, Europe, China, India and additional locations.The new modules use IGBT element...