United States, Nov. 12 -- GE Aerospace announced the successful demonstration of fourth generation of Silicon carbide (SiC) power MOSFET (metal-oxide-semiconductor-field-effect transistors) chips at the company's Research Center in Niskayuna, NY that will improve switching speed, efficiency, and durability. Available in a 5mm X 5 mm chip size, this latest generation of SiC power devices delivers 1200V and 11m?, with an industry leading temperature rating of 200degC. As industries are adopting advanced semiconductor technologies for hybrid- and battery-electric vehicle (HEV and BEV) platforms and more efficient power solutions, these advanced power devices will deliver a step change in efficiency and power density to meet the growing demand ...