ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,483,951, issued on Nov. 25, was assigned to MOXA INC. (New Taipei, Taiwan). "Wireless communication apparatus and method for handover predictio... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,773, issued on Nov. 25, was assigned to HERE Global B.V. (Eindhoven, Netherlands). "Network support for dynamic vehicle routing" was invent... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,478,948, issued on Nov. 25, was assigned to CALGON CARBON Corp. (Moon Township, Pa.). "Perfluoroalkyl and polyfluoroalkyl sorbent materials and... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,261, issued on Nov. 25, was assigned to SHENZHEN RESEARCH INSTITUTE OF THE HONG KONG POLYTECHNIC UNIVERSITY (Shenzhen, China). "Methodology... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,483,168, issued on Nov. 25, was assigned to SEW-EURODRIVE GMBH & Co. KG (Bruchsal, Germany). "Method for determining the angular position of th... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,551, issued on Nov. 25, was assigned to Hyundai Mobis Co. Ltd. (Seoul, South Korea). "Pad liner for brake caliper, brake caliper equipped w... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,284, issued on Nov. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei, Taiwan). "Buried gate semiconductor device with reduced gate in... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,437, issued on Nov. 25, was assigned to Cummins Inc. (Columbus, Ind.). "Non-emitting engines with oxyfuel combustion and carbon capture sys... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,646, issued on Nov. 25, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Processes for depositing SiB films" was invented by ... Read More
ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,237, issued on Nov. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan). "Insulated gate bipolar transistor" was invented ... Read More