ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,677, issued on Oct. 7, was assigned to QUALCOMM Inc. (San Diego). "Correlation of multiple channel state information reports for multi-layer... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,436,922, issued on Oct. 7, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea). "Heterogeneous distributed file system using different ty... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,033, issued on Oct. 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate placing method and substrate placing mechanism" was invented ... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,133, issued on Oct. 7, was assigned to The Board of Trustees of the University of Illinois (Urbana, Ill.). "Property-driven automatic genera... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,434,703, issued on Oct. 7, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Intersection detection and classification in autonomous machine ... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,391, issued on Oct. 7, was assigned to QUALCOMM Inc. (San Diego). "Channel aware tone reservation" was invented by Idan Michael Horn (Hod Ha... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,075, issued on Oct. 7, was assigned to BEIJING DAJIA INTERNET INFORMATION TECHNOLOGY Co. LTD. (Beijing). "Merge mode with motion vector diff... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,497, issued on Oct. 7, was assigned to Lutron Technology Co. LLC (Coopersburg, Pa.). "Method and apparatus for adjusting an ambient light th... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,515, issued on Oct. 7, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Device and method for generating training data for a machine... Read More
ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,615, issued on Oct. 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China). "Semiconductor structure and method for forming sam... Read More