ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,605, issued on May 13, was assigned to ZINITE Corp. (Edmonton, Canada).
"Hafnium nitride adhesion layer" was invented by Kenneth C. Cadien (Edmonton, Canada), Michael Clark (Edmonton, Canada), Katherine Cook (Edmonton, Canada) and Korel Dawkins (Edmonton, Canada).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel adhesion layer of hafnium nitride useful in the fabrication of semiconductor devices is disclosed. In particular, semiconductor devices such as, for example, thin film transistors which include one or more elements formed of metals with high electron concentrations, such as molybdenum, tungsten, nickel, ruthenium, cobalt and alloys there...