US Patent Issued to ZING SEMICONDUCTOR on Nov. 18 for "Method for determining types of defects in monocrystalline silicon wafer" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,277, issued on Nov. 18, was assigned to ZING SEMICONDUCTOR Corp. (Shanghai).

"Method for determining types of defects in monocrystalline silicon wafer" was invented by Xing Wei (Shanghai), Hao Wang (Shanghai), Minghao Li (Shanghai) and Yuehui Yu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a method for determining the type of defects in a monocrystalline silicon wafer, which includes the steps of: using LST to measure particles in an as-grown silicon wafer and thereby obtaining a first measurement, and determining a V-rich region based on the first measurement and a first preset density value; and subjectin...