US Patent Issued to Zing Semiconductor, SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES on Aug. 26 for "Method of detecting crystallographic defects and method of growing an ingot" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,485, issued on Aug. 26, was assigned to Zing Semiconductor Corp. (Shanghai) and SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES (Shanghai).

"Method of detecting crystallographic defects and method of growing an ingot" was invented by Xing Wei (Shanghai), Yun Liu (Shanghai), Xun Wang (Shanghai) and Zhongying Xue (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a method of detecting crystallographic defects, comprising: sampling wafer of an ingot in complying with a predetermined wafer sampling frequency; identifying crystallographic defects of the wafer to show the crystallograp...