US Patent Issued to ZHUZHOU CRRC TIMES SEMICONDUCTOR on March 18 for "Silicon carbide MOSFET device and cell structure thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,569, issued on March 18, was assigned to ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD. (Zhuzhou, China).

"Silicon carbide MOSFET device and cell structure thereof" was invented by Yafei Wang (Hunan, China), Xiaoping Dai (Hunan, China), Chengzhan Li (Hunan, China) and Yangang Wang (Hunan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type substrate (2). A main trench is provided in the surface of the first conductivity type drift region (3); a Schottky metal (4) is provided on the bottom and sidewalls of th...