US Patent Issued to ZHUZHOU CRRC TIMES SEMICONDUCTOR on Feb. 3 for "Cellular structure of silicon carbide MOSFET device, and silicon carbide MOSFET device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,359, issued on Feb. 3, was assigned to ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD. (Zhuzhou, China).

"Cellular structure of silicon carbide MOSFET device, and silicon carbide MOSFET device" was invented by Xiaoping Dai (Hunan, China), Yafei Wang (Hunan, China), Chengzhan Li (Hunan, China) and Haihui Luo (Hunan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a cellular structure of a silicon carbide MOSFET device, and a silicon carbide MOSFET device. The cellular structure comprises: second conductive well regions located on two sides of the cellular structure and arranged within the surface of a drift layer, first conductive source r...