ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,346, issued on Feb. 10, was assigned to ZHUZHOU CRRC TIMES SEMICONDUCTOR Co. LTD. (Zhuzhou, China).
"Reverse-conducting IGBT chip" was invented by Liheng Zhu (Hunan, China), Haihui Luo (Hunan, China), Qiang Xiao (Hunan, China), Rongzhen Qin (Hunan, China) and Mengjie Wang (Hunan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a reverse-conducting IGBT chip including a first conductive type substrate; and several first conductive type short circuit regions arranged at intervals below the substrate and adjacent to a collector region. The short circuit regions are located outside a first preset range having the center of a chip as a c...