US Patent Issued to Zhuhai YUEXIN Semiconductor on Jan. 13 for "Embedded inductance structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,394, issued on Jan. 13, was assigned to Zhuhai YUEXIN Semiconductor LLC (Guangdong, China).

"Embedded inductance structure and manufacturing method thereof" was invented by Xianming Chen (Guangdong, China), Xiaowei Xu (Guangdong, China), Gao Huang (Guangdong, China), Benxia Huang (Guangdong, China) and Jindong Feng (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embedded inductance structure includes an insulating layer, an inductance located in the insulating layer, a multi-layer conducting circuit located in the insulating layer and on the upper surface and lower surface of the insulating layer, and a multi-layer conductive cop...