US Patent Issued to ZHUHAI CRYSTAL RESONANCE TECHNOLOGIES on Oct. 14 for "FBAR filter with trap rich layer" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,445,104, issued on Oct. 14, was assigned to ZHUHAI CRYSTAL RESONANCE TECHNOLOGIES Co. LTD. (Tianjin, China).

"FBAR filter with trap rich layer" was invented by Dror Hurwitz (Zhuhai, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is...