US Patent Issued to ZHENGHAI GROUP on May 6 for "Low stray inductance busbar structure for power module" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,312, issued on May 6, was assigned to ZHENGHAI GROUP Co. LTD. (Shandong, China).

"Low stray inductance busbar structure for power module" was invented by Xianye Mao (Shandong, China), Jingya Sun (Shandong, China) and Changcheng Wang (Shandong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A busbar structure with less stray inductance for a power module includes a radiator, a copper-clad ceramic substrate, a wafer, a plastic case, a positive busbar, a negative busbar and a potting compound. The copper-clad ceramic substrate is welded on the radiator. The wafer is welded on the copper-clad ceramic substrate. The plastic case is fixed on the rad...