US Patent Issued to ZHEJIANG UNIVERSITY on Feb. 4 for "Preparation method and application of an Er doped Ga2O3 film" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,267, issued on Feb. 4, was assigned to ZHEJIANG UNIVERSITY (Hangzhou, China).

"Preparation method and application of an Er doped Ga2O3 film" was invented by Dongsheng Li (Hangzhou, China) and Deren Yang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses an Er doped Ga2O3 film, together with its preparation method and the application in the field of luminescence. The preparation method contains steps of: (1) the films are deposited by means of Radio-Frequency magnetron sputtering onto the heated substrates after the pre-sputtering for at least 5 minutes, selecting Er doped Ga2O3 target or Er and Ga2O3 targe...