US Patent Issued to Zhejiang Normal University on Dec. 23 for "Ablation-resistant high-entropy carbide-high-entropy diboride-silicon carbide multiphase ceramic and preparation thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,404, issued on Dec. 23, was assigned to Zhejiang Normal University (Jinhua, China).

"Ablation-resistant high-entropy carbide-high-entropy diboride-silicon carbide multiphase ceramic and preparation thereof" was invented by Wei Hao (Jinhua, China), Xinyue Chen (Jinhua, China), Chunni Zhou (Jinhua, China), Xiaoxian Qin (Jinhua, China) and Dongyun Wang (Jinhua, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing an ablation-resistant high-entropy carbide-high-entropy diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) p...