ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,611, issued on Oct. 7, was assigned to Zeno Semiconductor Inc. (Sunnyvale, Calif.).

"Memory cell and memory array select transistor" was invented by Jin-Woo Han (San Jose, Calif.) and Yuniarto Widjaja (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) with increased on-state current obtained through a parasitic bipolar junction transistor (BJT) of the MOSFET. Methods of operating the MOSFET as a memory cell or a memory array select transistor are provided."

The patent was filed on Jan. 16, 2024, under Application No. 18/414,135.

*For further information, inclu...