US Patent Issued to Zeno Semiconductor on Jan. 27 for "Memory device having electrically floating body transistor" (California Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,469, issued on Jan. 27, was assigned to Zeno Semiconductor Inc. (Sunnyvale, Calif.).

"Memory device having electrically floating body transistor" was invented by Yuniarto Widjaja (Cupertino, Calif.), Jin-Woo Han (San Jose, Calif.) and Benjamin S. Louie (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second region of the memory cell is spaced apart from the first...