US Patent Issued to Zeno Semiconductor on Jan. 13 for "Memory cell using data storing bipolar device" (California Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,291, issued on Jan. 13, was assigned to Zeno Semiconductor Inc. (Sunnyvale, Calif.).

"Memory cell using data storing bipolar device" was invented by Yuniarto Widjaja (Cupertino, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different f...