US Patent Issued to YOUNG CHANG CHEMICAL on May 20 for "Slurry composition for polishing silicon oxide film, and polishing method using same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,305,080, issued on May 20, was assigned to YOUNG CHANG CHEMICAL Co. LTD (Gyeongsangbuk-Do, South Korea).

"Slurry composition for polishing silicon oxide film, and polishing method using same" was invented by Seung Hun Lee (Daegu, South Korea), Seung Hyun Lee (Daegu, South Korea) and Seong Hwan Kim (Daegu, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Proposed are a CMP slurry composition and a polishing method using the same. The CMP slurry composition in which the zeta potential of colloidal silica serving as an abrasive is properly controlled and metal impurities are removed from the colloidal silica and to a polishing method using the sa...