ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,871, issued on June 10, was assigned to Yield Microelectronics Corp. (Chu-Pei, Taiwan).
"High writing rate antifuse array" was invented by Yu Ting Huang (Chu-Pei, Taiwan) and Chi Pei Wu (Chu-Pei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high writing rate antifuse array includes at least one sub-memory array including two antifuse memory cells arranged side by side between two neighboring bit lines. Each of two antifuse memory cells includes an antifuse transistor. The antifuse transistor has at least one sharp corner overlapping an antifuse gate above a first gate dielectric layer. Each of two antifuse memory cells includes a selectio...