ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,855, issued on Sept. 9, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Vertical memory devices" was invented by Kun Zhang (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device and method. An example method include forming a stack of layers on a substrate, the stack of layers including a source sacrificial layer, a conductive layer, gate sacrificial layers and insulating layers; forming a staircase into the stack of layers in a staircase region that is adjacent to an array region; forming channel structures in the array region, a channel structure including a chan...