US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 9 for "Methods for forming three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,628, issued on Sept. 9, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Methods for forming three-dimensional memory devices" was invented by Yuancheng Yang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Wei Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional (3D) memory device is disclosed. An array of NAND memory strings is formed on a first substrate. A first semiconductor layer is formed above the array of NAND memory strings. The first semiconductor layer includes single crystalline silicon. A first transistor is formed on the first semicond...