US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 9 for "Method of reducing program disturbance in memory device and memory device utilizing same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,609, issued on Sept. 9, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Method of reducing program disturbance in memory device and memory device utilizing same" was invented by Shan Li (Wuhan, China), Kaikai You (Wuhan, China), Ying Cui (Wuhan, China), Jianquan Jia (Wuhan, China), Kaiwei Li (Wuhan, China) and An Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some aspects, a memory device is provided. The memory device includes a plurality of memory strings and a peripheral circuit. One of the memory strings includes memory cells, a select transistor coupled to a select line and a bit line, and a dummy c...