US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 9 for "Memory device and its operating method, memory system and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,411,609, issued on Sept. 9, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and its operating method, memory system and operating method thereof" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect of the present disclosure, a memory device is provided. The memory device may include an array of memory cells, including a plurality of memory cells. A preset number of memory cells form a code word. The memory device may include peripheral circuit coupled to the array of memory cells. The peripheral circu...