US Patent Issued to Yangtze Memory Technologies on Sept. 30 for "Three-dimensional NAND memory device and method of forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,920, issued on Sept. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device and method of forming the same" was invented by Bingjie Yan (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect of the disclosure, a semiconductor device is provided. The semiconductor device includes one or more bottom select gate (BSG) layers positioned over a substrate, a plurality of word line layers positioned over the one or more BSG layers, and a plurality of insulating layers positioned on the substrate. The plurality of insulating layers is disposed on surfaces of the substrate,...