US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 30 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,918, issued on Sept. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Linchun Wu (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China), Wei Xie (Wuhan, China), Di Wang (Wuhan, China), Bingguo Wang (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. T...