US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 30 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,921, issued on Sept. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Di Wang (Wuhan, China), Zhong Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China), Zongliang Huo (Wuhan, China) and Wei Xie (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and t...