US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 30 for "Semiconductor devices, systems, and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,927, issued on Sept. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor devices, systems, and methods for forming the same" was invented by Liang Chen (Wuhan, China) and Wei Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a semiconductor device includes a substrate, a first trench isolation in the substrate, a second trench isolation in the substrate and surrounding a portion of the substrate, and a first routing electrode layer extending through the first trench isolation. The portion of the substrate is an active region of a transistor."

The patent was filed on Sept. 23, 2...