US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 30 for "Memory device and program operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,204, issued on Sept. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Hongtao Liu (Wuhan, China), Dejia Huang (Wuhan, China), Wenzhe Wei (Wuhan, China) and Ying Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array including memory strings and a first word line, and a peripheral circuit coupled to the memory array. Each memory string includes a select gate transistor and memory cells. The peripheral circuit is configured to apply, during a first time period, a program voltage to the first word line to program a ...