US Patent Issued to Yangtze Memory Technologies on Sept. 30 for "Memory device and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,923, issued on Sept. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and fabrication method thereof" was invented by Yonggang Yang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device fabrication method includes providing a semiconductor structure having a core area and a contact area arranged next to each other along a first direction. The semiconductor structure includes dielectric layer pairs that include first and second dielectric layers stacked in an alternating manner in a second direction approximately perpendicular to the first direction. The method further includes performing...