US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 30 for "Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,468, issued on Sept. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same" was invented by Jun Liu (Wuhan, China) and Weihua Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor structure including a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer including first bonding contacts and a first dielectric layer isolating the first bonding contacts. The semiconductor device also includes a second semiconductor str...