US Patent Issued to Yangtze Memory Technologies on Sept. 23 for "Three-dimensional NAND memory and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,544, issued on Sept. 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional NAND memory and fabrication method thereof" was invented by Kun Zhang (Hubei, China) and Wenxi Zhou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes forming an alternating dielectric stack on a substrate, wherein the alternating dielectric stack includes a plurality of dielectric layer pairs, each dielectric layer pair comprising a first dielectric layer and a second dielectric layer different from the first dielec...