US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 23 for "Read offset compensation in read operation of memory device" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,285, issued on Sept. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Read offset compensation in read operation of memory device" was invented by Hua Tan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory controller coupled to a memory device including an array of memory cells, each memory cell being set to one of 2N states corresponding to a piece of N-bits data, where N is an integer greater than 1, and the array of memory cells being partitioned into one or more units. The memory controller is coupled to the memory device and configured to, upon executing instructions, obtain, from the memory device, ...