US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 23 for "Memory device, method for controlling memory device and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,423,251, issued on Sept. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, method for controlling memory device and memory system" was invented by Xin Yang (Wuhan, China) and Zhuqin Duan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a method for controlling the memory device, and a memory system are provided. The memory device includes a memory array comprising a plurality of memory planes, and a peripheral circuit configured to control the plurality of memory planes to perform asynchronous operations. The peripheral circuit comprises a plurality of state machines connected to a mem...