US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 23 for "Electrostatic protection circuit, memory device, memory system, and electrostatic protection method" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,847, issued on Sept. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Electrostatic protection circuit, memory device, memory system, and electrostatic protection method" was invented by Zhiguo Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit for electrostatic protection includes a turning-on circuit, a turning-off circuit, and a discharge transistor. The turning-on circuit is coupled to an electrostatic terminal and configured to generate a first control signal based on an electrostatic signal generated by the electrostatic terminal. The turning-off circuit is coupled to the turning-on circuit and ...