US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 16 for "Memory device, memory system, and method for data calculation with the memory device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,020, issued on Sept. 16, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and method for data calculation with the memory device" was invented by Yue Sheng (Wuhan, China) and Shu Xie (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes a control logic configured to program first data and second data into different banks of the banks of memo...