US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Sept. 16 for "High-performance input buffer and memory device having the same" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,055, issued on Sept. 16, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"High-performance input buffer and memory device having the same" was invented by Gyuwan Kwon (Wuhan, China), Sangoh Lim (Wuhan, China) and Hang Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an input/output (I/O) interface, a first buffer and a second buffer coupled to the I/O interface, and an input buffer controller coupled to the I/O interface. The input buffer controller is configured to in response to receiving a command signal or an address signal from the I/O interface, enable the first buffer to perform ...