US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 7 for "Three-dimensional memory device and methods for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,438,090, issued on Oct. 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device and methods for forming the same" was invented by Mingkang Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure and a second semiconductor structure bonded with the first semiconductor structure. The first semiconductor structure includes an array of NAND memory strings, a semiconductor layer in contact with source ends of the array of NAND memory strings, a non-conductive layer aligned with the semiconductor layer,...