US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 7 for "Semiconductor device, three-dimensional memory and method for fabricating the semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,605, issued on Oct. 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor device, three-dimensional memory and method for fabricating the semiconductor device" was invented by Quan Zhang (Wuhan, China), Lan Yao (Wuhan, China), Jiaji Wu (Wuhan, China) and Beibei Zhu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a semiconductor device, a three-dimensional memory and a method for fabricating the semiconductor device. The method includes forming a shallow trench isolation trench in a substrate. The substrate comprises an active region including a source region, a channel reg...