US Patent Issued to Yangtze Memory Technologies on Oct. 7 for "Method of reducing program operation time in 3D NAND memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,813, issued on Oct. 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method of reducing program operation time in 3D NAND memory systems" was invented by XiangNan Zhao (Hubei, China) and HongTao Liu (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are an exemplary memory device and methods for programing the memory device. In an aspect, a memory device comprises a memory configured to store a program code and a processor. The processor can be configured to perform a first programming to a memory cell of the memory device with a first step voltage value. The processor is further configured to determ...