US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 7 for "Configuration method and reading method of 3D memory device, 3D memory device, and memory system" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,824, issued on Oct. 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Configuration method and reading method of 3D memory device, 3D memory device, and memory system" was invented by Hongtao Liu (Wuhan, China), Songmin Jiang (Wuhan, China) and Dejia Huang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a configuration method and a reading method for a 3D memory, a 3D memory and system. The configuration method includes: writing test data into a plurality of selected memory cells corresponding to a selected word line in one of a plurality of memory blocks of the memory device; determ...